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| MRF6VP41KHr6 MRF6VP41KHsr6 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for pulse and cw wideband applications with frequencies up to 500 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical pulse performance at 450 mhz: v dd =50volts,i dq = 150 ma, p out = 1000 watts peak (200 w avg.), pulse width = 100 sec, duty cycle = 20% power gain ? 20 db drain efficiency ? 64% ? capable of handling 10:1 vswr @ 50 vdc, 450 mhz, 1000 watts peak power features ? characterized with series equival ent large--signal impedance parameters ? cw operation capabilit y with adequate cooling ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? designed for push--pull operation ? greater negative gate--source voltage range for improved class c operation ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. for r5 tape and reel option, see p. 17. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs -- 6 , + 1 0 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c total device dissipation @ t c =25 c, cw only (3) p d 1333 w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to fig. 12, transient thermal impedance, for inf ormation to calculate val ue for pulsed operation. document number: MRF6VP41KH rev. 6, 4/2012 freescale semiconductor technical data MRF6VP41KHr6 MRF6VP41KHsr6 10--500 mhz, 1000 w, 50 v lateral n--channel broadband rf power mosfets case 375d--05, style 1 ni--1230 MRF6VP41KHr6 parts are push--pull (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections case 375e--04, style 1 ni--1230s MRF6VP41KHsr6 ? freescale semiconductor, inc., 2008--2010, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal impedance, junction to case pulse: case temperature 80 c, 1000 w peak, 100 sec pulse width, 20% duty cycle, 450 mhz (3) z jc 0.03 c/w thermal resistance, junction to case cw: case temperature 84 c, 1000 w cw, 352.2 mhz r jc 0.15 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2000 v machine model (per eia/jesd22--a115) a, passes 125 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc drain--source breakdown voltage (i d = 300 ma, v gs =0vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 100 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 5 ma on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 1600 adc) v gs(th) 1 1.68 3 vdc gate quiescent voltage (5) (v dd =50vdc,i d = 150 madc, measured in functional test) v gs(q) 1.5 2.2 3.5 vdc drain--source on--voltage (4) (v gs =10vdc,i d =4adc) v ds(on) ? 0.28 ? vdc dynamic characteristics (4) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 3.3 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 147 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 506 ? pf functional tests (5) (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 150 ma, p out = 1000 w peak (200 w avg.), f = 450 mhz, 100 sec pulse width, 20% duty cycle power gain g ps 19 20 22 db drain efficiency d 60 64 ? % input return loss irl ? -- 1 8 -- 9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 3. refer to fig. 12, transient therma l impedance, for other pulsed conditions. 4. each side of device measured separately. 5. measurement made with device i n push--pull configuration. (continued) MRF6VP41KHr6 MRF6VP41KHsr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance ? 352.2 mhz (in freescale 352.2 mhz test fixture, 50 ohm system) v dd =50vdc,i dq = 150 ma, p out = 1000 w cw power gain g ps ? 20.1 ? db drain efficiency d ? 67 ? % input return loss irl ? --10.2 ? db typical performance ? 500 mhz (in freescale 500 mhz test fixture, 50 ohm system) v dd =50vdc,i dq = 150 ma, p out = 1000 w peak (200 w avg.), f = 500 mhz, 100 sec pulse width, 20% duty cycle power gain g ps ? 19.5 ? db drain efficiency d ? 66 ? % input return loss irl ? -- 2 3 ? db 4 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 figure 2. MRF6VP41KHr6(hsr6) pulse test circuit schematic ? 450 mhz z14*, z15* 0.764 x 0.150 microstrip z16, z17 0.290 x 0.430 microstrip z18, z19 0.100 x 0.430 microstrip z20, z21, z22, z23 0.080 x 0.430 microstrip z24 0.257 x 0.215 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 * line length includes microstrip bends z1 0.366 x 0.082 microstrip z2*, z3* 0.170 x 0.100 microstrip z4*, z5* 0.220 x 0.451 microstrip z6, z7 0.117 x 0.726 microstrip z8*, z9* 0.792 x 0.058 microstrip z10, z11 0.316 x 0.726 microstrip z12, z13 0.262 x 0.507 microstrip rf input z4 c5 z5 c6 z1 dut v supply z13 rf output z24 v bias z9 z2 z3 z15 z14 b1 c22 c24 z18 z20 c25 c28 c29 + coax1 coax2 coax3 coax4 z22 c1 + l1 c7 c8 z6 z7 c23 c21 c20 c19 z23 c18 z21 c17 z19 c16 c9 c10 z10 z11 l2 b2 c11 + c13 c12 c14 z8 c3 c2 c4 z12 z16 z17 c15 c26 c27 c30 + v bias v supply c31 c34 c35 + c32 c33 c36 + l3 l4 table 5. MRF6VP41KHr6(hsr6) pulse test circuit component designations and values ? 450 mhz part description part number manufacturer b1, b2 47 ? , 100 mhz short ferrite beads 2743019447 fair--rite c1, c11 47 f, 50 v electrolytic capacitors 476kxm063m illinois c2, c12, c28, c34 0.1 f chip capacitors cdr33bx104akys kemet c3, c13, c27, c33 220 nf, 50 v chip capacitors c1812c224k5rac kemet c4, c14 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c5, c6, c8, c15 27 pf chip capacitors atc100b270jt500xt atc c7, c10 0.8--8.0 pf variable capacitors 27291sl johanson components c9 33 pf chip capacitor atc100b330jt500xt atc c16 12 pf chip capacitor atc100b120jt500xt atc c17 10 pf chip capacitor atc100b100jt500xt atc c18 9.1 pf chip capacitor atc100b9r1ct500xt atc c19 8.2 pf chip capacitor atc100b8r2ct500xt atc c20, c21, c22, c23, c25, c32 240 pf chip capacitors atc100b241jt200xt atc c24 5.6 pf chip capacitor atc100b5r6ct500xt atc c26, c31 2.2 f, 100 v chip capacitors 2225x7r225kt3ab atc c29, c30, c35, c36 330 f, 63 v electrolytic capacitors emvy630gtr331mmh0s nippon chemi--con coax1, 2, 3, 4 25 ? semi rigid coax, 2.2 shield length ut--141c--25 micro--coax l1, l2 2.5 nh, 1 turn inductors a01tklc coilcraft l3, l4 43 nh, 10 turn inductors b10tjlc coilcraft MRF6VP41KHr6 MRF6VP41KHsr6 5 rf device data freescale semiconductor, inc. figure 3. MRF6VP41KHr6(hsr6) pulse test circuit component layout ? 450 mhz cut out area MRF6VP41KH rev. 1 coax1 c1 b1 c2 c3 c4 l1 c5 c6 coax2 c7 c8 c9 c10 c11 b2 c12 c13 c14 c33 c34 c36 c35 c31 c32 l4 coax3 coax4 c15 c16 c17 c19 c18 c24 c22 c23 c21 c20 l3 c25 c26 c27 c28 c29 c30 l2 6 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 typical characteristics 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 100 10 40 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc 1 100 1 t c =25 c 10 10 v ds , drain--source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 100 t j = 200 c t j = 175 c t j = 150 c note: each side of device measured separately. 21 1 0 80 10 18 16 14 70 60 50 40 30 p out , output power (watts) peak figure 6. power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 17 15 13 1000 2000 g ps 20 19 20 100 10 v dd =50vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% 55 65 34 63 62 61 p in , input power (dbm) peak figure 7. output power versus input power 64 60 44 59 58 57 35 36 37 38 39 40 41 42 p out , output power (dbm) p3db = 60.70 dbm (1174.89 w) actual ideal p1db = 60.33 dbm (1078.94 w) 56 43 v dd =50vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% 17 23 10 20 19 p out , output power (watts) peak figure 8. power gain versus output power g ps , power gain (db) 100 18 i dq = 6000 ma 1000 2000 3600 ma 1500 ma 150 ma 375 ma 750 ma 21 22 v dd =50vdc f = 450 mhz pulse width = 100 sec duty cycle = 20% figure 9. power gain versus output power p out , output power (watts) peak g ps , power gain (db) v dd =30v 12 22 0 16 35 v 20 45 v 200 400 600 800 1000 1200 1400 50 v 40 v 14 18 i dq = 150 ma, f = 450 mhz pulse width = 100 sec duty cycle = 20% note: each side of device measured separately. MRF6VP41KHr6 MRF6VP41KHsr6 7 rf device data freescale semiconductor, inc. typical characteristics 45 35 65 20 25 _ c t c =--30 _ c 85 _ c 35 25 55 50 p in , input power (dbm) peak figure 10. output power versus input power p out , output power (dbm) 30 40 60 45 40 v dd =50vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% 22 1 0 100 100 17 15 13 70 60 50 40 30 p out , output power (watts) peak figure 11. power gain and drain efficiency versus output power g ps , power gain (db) d , drain efficiency (%) d 16 14 12 1000 2000 25 _ c t c =--30 _ c 85 _ c 20 18 g ps 19 20 21 10 80 90 10 v dd =50vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% 0.18 110 rectangular pulse width (s) figure 12. transient thermal impedance z jc , thermal impedance ( c/w) 0.00001 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.0001 0.001 0.01 0.1 t c = case temperature z jc = thermal impedanc e (from graph) p d = peak power dissipation d=dutyfactor=t 1 /t 2 t 1 = pulse width; t 2 = pulse period t j (peak) = p d *z jc +t c t 2 t 1 p d 250 10 9 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature -- cw mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. note : for pulse applications or cw conditions, use the mttf calculator referenced above. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8 v dd =50vdc p out = 1000 w cw d = 67% d=0.7 d=0.5 d=0.3 d=0.1 f = 450 mhz 8 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 z o =2 ? z load f = 450 mhz z source f = 450 mhz v dd =50vdc,i dq = 150 ma, p out = 1000 w peak f mhz z source ? z load ? 450 0.86 + j1.06 1.58 + j1.22 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 14. series equivalent source and load impedance ? 450 mhz z source z load input matching network device under test output matching network -- -- + + MRF6VP41KHr6 MRF6VP41KHsr6 9 rf device data freescale semiconductor, inc. figure 15. MRF6VP41KHr6(hsr6) test circuit component layout ? 352.2 mhz -- -- cut out area MRF6VP41KH 352 mhz rev. 1 c11 c9 c7 c5 l1 c1 c2 c3 c4 l2 c12 b2 c10 c8 c6 l4 c21 c23 c20 c22 c13 l3 c14 c17 c16 c15 c18 c19 coax1 coax2 coax3 coax4 table 6. MRF6VP41KHr6(hsr6) test circui t component designations and values ? 352.2 mhz part description part number manufacturer b1, b2 47 ? , 100 mhz short ferrite beads 2743019447 fair--rite c1, c2 27 pf chip capacitors atc100b270jt500xt atc c3 0.8--8.0 pf variable capacitor, gigatrim 27291sl johanson c4 75 pf chip capacitor atc100b750jt500xt atc c5, c6 2.2 f chip capacitors c1825c225j5rac kemet c7, c8 220 nf chip capacitors c1812c224j5rac kemet c9, c10 0.1 f chip capacitors cdr33bx104akys avx c11, c12 47 f, 50 v electrolytic capacitors 476kxm050m illinois cap c13 36 pf 500 v chip capacitor mcm01--009ed360j--f cde c14, c15, c16, c17 240 pf chip capacitors atc100b241jt200xt atc c18, c19 2.2 f chip capacitors g2225x7r225kt3ab atc c20, c21, c22, c23 470 f, 63 v electrolytic capacitors mcrh63v477m13x21--rh multicomp coax1, 2, 3, 4 25 ? semi rigid coax, 2.2 shield length ut141--25 precision tube company l1, l2 2.5 nh inductors a01t coilcraft l3, l4 10 turn #16 awg id=0.160 inductors, hand wound copper wire freescale pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 ds2655 ds electronics 10 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 z o =10 ? z load f = 352.2 mhz z source f = 352.2 mhz v dd =50vdc,i dq = 150 ma, p out = 1000 w cw f mhz z source ? z load ? 352.2 0.5 + j6.5 2.9 + j6.35 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 16. series equivalent source and load impedance ? 352.2 mhz z source z load input matching network device under test output matching network -- -- + + MRF6VP41KHr6 MRF6VP41KHsr6 11 rf device data freescale semiconductor, inc. figure 17. MRF6VP41KHr6(hsr6) test circuit component layout ? 500 mhz cut out area MRF6VP41KH rev. 1 coax1 c1 b1 c2 c3 c4 l1 c5 c6 coax2 c7 c8 c9 c10 c11 b2 c12 c13 c14 c33 c34 c36 c35 c31 c32 l4 coax3 coax4 c15 c16 c19 c18 c24 c22 c23 c21 c20 l3 c25 c26 c27 c28 c29 c30 l2 c17 not used in MRF6VP41KHr6(hsr6) 500 mhz application. table 7. MRF6VP41KHr6(hsr6) test circuit component designations and values ? 500 mhz part description part number manufacturer b1, b2 47 ? , 100 mhz short ferrite beads 2743019447 fair--rite c1, c11 47 f, 50 v electrolytic capacitors 476kxm063m illinois c2, c12, c28, c34 0.1 f chip capacitors cdr33bx104akys kemet c3, c13, c27, c33 220 nf, 50 v chip capacitors c1812c224k5rac kemet c4, c14 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c5, c6, c15 27 pf chip capacitors atc100b270jt500xt atc c7, c10 0.8--8.0 pf variable capacitors 27291sl johanson components c8 13 pf chip capacitor atc100b120jt500xt atc c9 33 pf chip capacitor atc100b330jt500xt atc c18 9.1 pf chip capacitor atc100b9r1ct500xt atc c16, c19 8.2 pf chip capacitors atc100b8r2ct500xt atc c20, c21, c22, c23, c25, c32 240 pf chip capacitors atc100b241jt200xt atc c24 5.6 pf chip capacitor atc100b5r6ct500xt atc c26, c31 2.2 f, 100 v chip capacitors 2225x7r225kt3ab atc c29, c30, c35, c36 330 f, 63 v electrolytic capacitors mcrh63v337m13x21--rh multicomp coax1, 2, 3, 4 25 ? semi rigid coax, 2.2 shield length ut--141c--25 micro--coax l1, l2 2.5 nh, 1 turn inductors a01tklc coilcraft l3, l4 43 nh, 10 turn inductors b10tjlc coilcraft c17 not used in MRF6VP41KHr6(hsr6) 500 mhz application. 12 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 z o =2 ? z load f = 500 mhz z source f = 500 mhz v dd =50vdc,i dq = 150 ma, p out = 1000 w peak f mhz z source ? z load ? 500 0.75 + j0.5 1.73 + j0.95 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 18. series equivalent source and load impedance ? 500 mhz z source z load input matching network device under test output matching network -- -- + + MRF6VP41KHr6 MRF6VP41KHsr6 13 rf device data freescale semiconductor, inc. package dimensions 14 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 MRF6VP41KHr6 MRF6VP41KHsr6 15 rf device data freescale semiconductor, inc. 16 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 MRF6VP41KHr6 MRF6VP41KHsr6 17 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for MRF6VP41KH and MRF6VP41KHs parts will be available for 2 years after release of MRF6VP41KH and MRF6VP41KHs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrf6vp41k h and MRF6VP41KHs in the r6 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2008 ? initial release of data sheet 1 apr. 2008 ? added fig. 12, maximum transient thermal impedance, p. 6 2 sept. 2008 ? added note to fig. 4, capacitance versus drain-- source voltage, to denote that each side of device is measured separately, p. 5 ? updated fig. 5, dc safe operating area, to clar ify that measurement is on a per--side basis, p. 5 ? corrected fig. 13, mttf versus junction temperatur e, to reflect the correct die size and increased the mttf factor accordingly, p. 6 3 nov. 2008 ? added cw operation capability bullet to features section, p. 1 ? added cw operation to maximum ratings table, p. 1 ? added cw thermal data to thermal characteristics table, p. 2 ? fig. 14, series equivalent source and load impedance, corrected z source copy to read ?test circuit impedance as measured from gate to gate, balanced configuration? and z load copy to read ?test circuit impedance as measured from drain to drain, balanced c onfiguration?; replaced impedance diagram to show push--pull test conditions, p. 7 4 mar. 2009 ? cw rating limits updated from 1176 w to 1107 w and 5.5 w/ cto4.6w/ c to reflect recent remeasured data, max ratings table, p. 1 ? cw thermal characteristics changed from 81 cto48 c and 0.16 c/w to 0.15 c/w using data from the most recent 352.2 mhz cw application circuit, p. 2 ? added typical performances table for 352.2 mhz and 500 mhz applications, p. 3 ? added fig. 14, mttf versus junction temperature -- cw, p. 7 ? added figs. 16 and 18, test circuit component layout -- 352.2 mhz and 500 mhz, and tables 6 and 7, test circuit component designations and va lues -- 352.2 mhz and 500 mhz, p. 9, 11 ? added figs. 17 and 19, series equivalent sour ce and load impedance -- 352.2 mhz and 500 mhz, p. 10, 12 (continued) 18 rf device data freescale semiconductor, inc. MRF6VP41KHr6 MRF6VP41KHsr6 revision history (cont.) revision date description 5 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 17 6 apr. 2012 ? table 1, maximum ratings, cw operation: changed cw rating from an rf based value to a maximum power dissipated value -- cw operation @ t c =25 c, 1107 w changed to total device dissipation @ t c = 25 c, cw only, 1333 watts. value change to 1333 watts applies only to devices with a date code of qq1218 or newer. refer to pcn15074, p. 1 ? table 2, thermal characteristics, t hermal resistance, junction to case : 2.4 mil wire configuration thermal testing resulted in a case temperature change from 48 cto84 c, p. 2 ? table 3, esd protection characte ristics: added the device?s esd passing level as applicable to each esd class, p. 2 ? modified figure titles and/or graph axes l abels to clarify application use, p. 4--7 ? fig. 12, transient thermal impedance: graph updated to show correct cw operation, p. 7 ? fig. 13, mttf versus junction temperature -- pulse d removed, p. 7. refer to the device?s mttf calculator available at freescale.com/rfpower. g o to design resources > software and tools. ? fig. 14, mttf versus junction temperature ? cw: mttf end temperature on graph changed to match maximum operating junction temperature, p. 7 (renum bered as fig. 13 after fig. 13, mttf versus junction temperature -- pulsed removed) MRF6VP41KHr6 MRF6VP41KHsr6 19 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2008--2010, 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MRF6VP41KH rev. 6, 4/2012 |
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